Growth and characteristics of terbium doped Ga2O3 luminescent films

Terbium (Tb) doped Ga2O3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) at substrate temperatures ranging from 100 to 500 & DEG;C. Energy dispersive spectroscopy results show that Tb atoms are more readily incorporated into Ga2O3 at high temperatures. X-ray diffraction analysis indicates that (-201) oriented monoclinic Tb doped Ga2O3 films can be obtained at a substate temperature of 500 & DEG;C. All films have high transmittance of over 80 % in the visible and infrared region. The peaks observed at 486, 540, 582, and 622 nm in the room temperature (RT) photoluminescence spectra for all samples are ascribed to the 5D4-7F6, 5D4-7F5, 5D4-7F4, and 5D4-7F3 transitions, respectively. No peak shift for all transitions in the PL spectra is found with temperature decreasing from RT to 60 K. The results suggest that Tb doped Ga2O3 films are promising for realizing the full color microscale light emitting diodes.