Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator

被引:8
作者
Sahu, Satyam [1 ,2 ]
Panda, Jaganandha [1 ]
Haider, Golam [1 ]
Frank, Otakar [1 ]
Kalbac, Martin [1 ]
Velicky, Matej [1 ]
机构
[1] Czech Acad Sci, J Heyrovsky Inst Phys Chem, Prague 18223, Czech Republic
[2] Charles Univ Prague, Fac Math & Phys, Dept Biophys Chem & Macromol Phys, Prague 12116, Czech Republic
关键词
topological insulator; self-biased; photodetector; responsivity; photostability; optoelectronics; LIGHT PHOTODETECTOR; HETEROJUNCTION; SB2TE3; BI2TE3;
D O I
10.1021/acsaelm.3c01195
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Topological insulators show promise for high-performance optoelectronic applications due to their nonlinear optical properties, broad spectral absorption, ultrafast response to optical excitation, and excellent thermoelectric properties. Here, we introduce a self-biased photodetector based on the topological insulator Bi2SeTe2, driven by the photothermoelectric effect. Operating without external bias, the photodetector delivers a competitive visible-range photoresponse reaching responsivity of approximate to 27 mA/W and detectivity of approximate to 2 x 10(9) Jones at 458 nm. Comparable to individual topological insulators as well as topological insulator-based heterojunctions, this underscores Bi2SeTe2's potential, especially in scenarios where external power sources cannot be used. Its self-biased nature eliminates the need for an external bias, making it an ideal material for low-power and remote-sensing applications.
引用
收藏
页码:6697 / 6703
页数:7
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