Identifying and Modeling Resonance-Related Fluctuations on the Experimental Characteristic Impedance for PCB and On-Chip Transmission Lines

被引:1
|
作者
Rodriguez-Velasquez, Yojanes [1 ]
Torres-Torres, Reydezel [2 ]
Murphy-Arteaga, Roberto [2 ]
机构
[1] INTEL Guadalajara, Zapopan 45017, Mexico
[2] Inst Nacl Astrofis Opt & Electr, Elect Dept, Tonantzintla 72840, Puebla, Mexico
关键词
characteristic impedance; S-parameter measurements; interconnect transitions; INTERCONNECTS;
D O I
10.3390/electronics12132994
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
It is well known that the fluctuations in experimentally obtained characteristic impedance versus frequency curves are associated with resonances originated by standing waves bouncing back and forth between the transitions at the transmission line terminations. In fact, microwave engineers are aware of the difficulty to completely remove the parasitic effect of these transitions, which makes obtaining smooth and physically expected frequency-dependent curves for the characteristic impedance a tough task. Here, we point out for the first time that these curves exhibit additional fluctuations within the microwave range due to standing waves taking place within the transition itself. Experimental verification of this fact was carried out by extracting this fundamental parameter from measurements performed on on-chip and printed circuit board (PCB) lines using probe pad adapters and coaxial connectors. We demonstrate that the lumped circuit approach to represent the transitions lacks validity when the additional fluctuations due to the connectors become apparent, and we propose a new model including transmission line effects within the transition.
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页数:10
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