Fabrication and chemical modification of carbon nanodots/monolayer hexagonal boron nitride/substrate heterostructures and their terahertz optoelectronic properties

被引:4
|
作者
Wen, Hua [1 ,2 ]
Wang, Boyang [3 ]
Cheng, Xingjia [1 ,2 ]
Song, Dan [4 ]
Xiao, Huan [5 ,6 ]
Xu, Wen [1 ,5 ,6 ,7 ]
Lu, Siyu [1 ,3 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Hefei 230026, Peoples R China
[3] Zhengzhou Univ, Coll Chem, Green Catalysis Ctr, Zhengzhou 450000, Peoples R China
[4] Chongqing Med Univ, Coll Biomed Engn, Key Lab Ultrasound Med & Engn, Chongqing 400010, Peoples R China
[5] Yunnan Univ, Sch Phys & Astron, Kunming 650091, Peoples R China
[6] Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650091, Peoples R China
[7] Micro Opt Instruments Inc, Shenzhen 518118, Peoples R China
基金
中国国家自然科学基金;
关键词
Carbon nanodots; Chemical modification; Monolayer hexagonal boron nitride; Van der Waals heterostructure; Terahertz optoelectronic properties; GRAPHENE QUANTUM DOTS; PHOTOLUMINESCENCE MECHANISM; DEEP-ULTRAVIOLET; EMISSION; NITRIDE; RED; PHOTORESPONSE; FLUORESCENCE; SINGLE; STATE;
D O I
10.1016/j.apsusc.2023.157441
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Carbon nanodots (CNDs) can be potentially applied in optoelectronic devices such as full-color display and LED. In this study we fabricate, for the first time, CNDs/monolayer hexagonal boron nitride (ML-hBN)/sapphire heterostructures, where i) ML-hBN is compatible with both CNDs and sapphire due to the presence of the van der Waals (vdW) forces between ML-hBN and these materials and ii) the CNDs can be chemically modified by attaching chemical bonds and/or functional groups on the surface/edges of the carbon-cores of CNDs. The basic physical and chemical properties of CNDs and the heterostructures are characterized. We further apply terahertz time-domain spectroscopy to measure the optical conductivity of CNDs/ML-hBN vdW heterostructures and to determine optically the key physical parameters of these heterostructures. The temperature dependence of these parameters is examined. We find that the agglomeration of dried CNDs on sapphire substrate can be largely suppressed by the presence of ML-hBN and the electronic and optoelectronic properties of the heterostructure can be controlled and modulated by chemical modification on CNDs. The results obtained from this study can be helpful for the fabrication, integration and modulation of CND based vdW heterostructures for practical device applications.
引用
收藏
页数:10
相关论文
共 50 条
  • [1] Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy
    Bilal, Muhammad
    Xu, Wen
    Wang, Chao
    Wen, Hua
    Zhao, Xinnian
    Song, Dan
    Ding, Lan
    NANOMATERIALS, 2020, 10 (04)
  • [2] Optoelectronic properties of hexagonal boron nitride epilayers
    Cao, X. K.
    Majety, S.
    Li, J.
    Lin, J. Y.
    Jiang, H. X.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES X, 2013, 8631
  • [3] Monolayer to Bulk Properties of Hexagonal Boron Nitride
    Wickramaratne, Darshana
    Weston, Leigh
    Van de Walle, Chris G.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2018, 122 (44): : 25524 - 25529
  • [4] Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
    Kun Ba
    Wei Jiang
    Jingxin Cheng
    Jingxian Bao
    Ningning Xuan
    Yangye Sun
    Bing Liu
    Aozhen Xie
    Shiwei Wu
    Zhengzong Sun
    Scientific Reports, 7
  • [5] Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
    Ba, Kun
    Jiang, Wei
    Cheng, Jingxin
    Bao, Jingxian
    Xuan, Ningning
    Sun, Yangye
    Liu, Bing
    Xie, Aozhen
    Wu, Shiwei
    Sun, Zhengzong
    SCIENTIFIC REPORTS, 2017, 7
  • [6] Hexagonal boron nitride film substrate for fabrication of nanostructures
    Lee, KS
    Kim, YS
    Tosa, M
    Kasahara, A
    Yosihara, K
    APPLIED SURFACE SCIENCE, 2001, 169 (169-170) : 415 - 419
  • [7] Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures
    Pan, Minghu
    Liang, Liangbo
    Lin, Wenzhi
    Kim, Soo Min
    Li, Qing
    Kong, Jing
    Dresselhaus, Mildred S.
    Meunier, Vincent
    2D MATERIALS, 2016, 3 (04):
  • [8] Graphene, hexagonal boron nitride, and their heterostructures: properties and applications
    Wang, Jingang
    Ma, Fengcai
    Sun, Mengtao
    RSC ADVANCES, 2017, 7 (27) : 16801 - 16822
  • [9] Terahertz optical Hall effect in p-type monolayer hexagonal boron nitride on fused silica substrate
    Bilal, Muhammad
    Xu, Wen
    Wen, Hua
    Cheng, Xingjia
    Xiao, Yiming
    Ding, Lan
    OPTICS LETTERS, 2021, 46 (09) : 2196 - 2199
  • [10] Enhancement of the contrast for a hexagonal boron nitride monolayer placed on a silicon nitride/silicon substrate
    Hattori, Yoshiaki
    Taniguchi, Takashi
    Watanabe, Kenji
    Kitamura, Masatoshi
    APPLIED PHYSICS EXPRESS, 2022, 15 (08)