Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET

The reliability of the CMOS devices is severely affected due to the presence of interface (Si/SiO2) trap charges and self-heating effect (SHE). In this paper, we investigated the trap and temperature-dependent performance barrier and aging issues in Nanosheet FET (NSFET). Through well-calibrated TCAD models, we investigated: a) the threshold voltage (Vth) modulation due to type (donor/acceptor) and concentration of the trap charges; b) the role of the location of the trap charges around the conduction band (CB) and valence band (VB); c) the impact of the ambient temperature (TA) and SHE on the performance of NSFET; d) the performance metrics viz ION, IOFF, subthreshold slope (SS) influenced by the trap assisted SHE; e) the device aging, i.e., end of a lifetime (EOL) defined as Vth shift by +/- 50 mV. Hence, trap-assisted SHE analysis by varying the ambient temperature is worth exploring for reliable NSFET operation.