Detailed comparison of threshold voltage extraction methods in FD-SOI MOSFETs

被引：6

作者：

Pananakakis, Georges ^{[1
]}

Ghibaudo, Gerard ^{[1
]}

Cristoloveanu, Sorin ^{[1
]}

机构：

[1] Univ Grenoble Alpes, IMEP LAHC, Grenoble INP, 3 Parvis L Neel, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2023年 / 209卷

关键词：

Threshold voltage; MOSFET; FD-SOI;

D O I：

10.1016/j.sse.2023.108764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The threshold voltage in ultrathin FD-SOI MOSFETs is revisited from theoretical definitions to pragmatic extraction techniques, including novel ones. Their respective merits and limitations are underlined.

引用

页数：4

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