Epitaxial van der Waals contacts for low schottky barrier MoS2 field effect transistors

被引:11
作者
Liu, Huawei [1 ,2 ]
Fang, Lizhen [1 ,2 ]
Zhu, Xiaoli [1 ,2 ]
Zhu, Chenguang [1 ,2 ]
Sun, Xingxia [1 ,2 ]
Xu, Gengzhao [3 ]
Zheng, Biyuan [1 ,2 ]
Liu, Ying [1 ,2 ]
Luo, Ziyu [1 ,2 ]
Wang, Hui [1 ,2 ]
Yao, Chengdong [1 ,2 ]
Li, Dong [1 ,2 ]
Pan, Anlian [1 ,2 ]
机构
[1] Hunan Univ, Coll Mat Sci & Engn, Key Lab Micronano Phys & Technol Hunan Prov, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Peoples R China
[2] Hunan Univ, Hunan Inst Optoelect Integrat, Changsha 410082, Peoples R China
[3] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
基金
中国博士后科学基金; 国家重点研发计划; 中国国家自然科学基金;
关键词
heterojunction; van der Waals epitaxial; mobility; Schottky barrier; transistors; TOPOLOGICAL INSULATOR; LAYER; MEMORY; TRANSPORT; GROWTH;
D O I
10.1007/s12274-022-5229-y
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Small contact resistance and low Schottky barrier height (SBH) are the keys to energy-efficient electronics and optoelectronics. Two-dimensional (2D) semiconductors-based field effect transistors (FETs), holding great promise for next-generation information circuits, still suffer from poor contact quality at the metal-semiconductor junction interface, which severely hinders their further applications. Here, a novel contact strategy is proposed, where Bi2Te3 nanosheets with high conductivity were in-situ epitaxially grown on MoS2 as van der Waals contacts, which can effectively avoid the damage to MoS2 caused during the device manufacturing process, leading to a high-performance MoS2 FET. Moreover, the small work function difference between Bi2Te3 and MoS2 (Bi2Te3: 4.31 eV, MoS2: 4.37 eV, measured by Kelvin probe force microscopy (KPFM)), enables small band bending and Ohmic contact at the junction interface. Electrical characterizations indicate that the MoS2 FET device with Bi2Te3 contacts possesses a high current on/off ratio (5 x 10(7)), large effective carrier mobility (90 cm(2)/(V.s)), and low flat-band SBH (60 meV), which is favorable as compared with MoS2 FET with traditional Cr/Au electrodes contacts, and superior to the vast majority of the reported chemical vapor deposition (CVD) MoS2-based FET device. The demonstration of epitaxial van der Waals Bi2Te3 contacts will facilitate the application of 2D MoS2 nanosheet in next-generation low-power consumption electronics and optoelectronics.
引用
收藏
页码:11832 / 11838
页数:7
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