On-surface synthesis of disilabenzene-bridged covalent organic frameworks

被引:40
|
作者
Sun, Kewei [1 ]
Silveira, Orlando J. [2 ]
Ma, Yujing [1 ]
Hasegawa, Yuri [3 ]
Matsumoto, Michio [4 ]
Kera, Satoshi [3 ]
Krejci, Ondrej [2 ]
Foster, Adam S. [2 ,5 ]
Kawai, Shigeki [1 ,6 ]
机构
[1] Natl Inst Mat Sci, Res Ctr Adv Measurement & Characterizat, Tsukuba, Ibaraki, Japan
[2] Aalto Univ, Dept Appl Phys, Espoo, Finland
[3] Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi, Japan
[4] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki, Japan
[5] Kanazawa Univ, WPI Nano Life Sci Inst WPI NanoLSI, Kakuma Machi, Kanazawa, Ishikawa, Japan
[6] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki, Japan
基金
日本学术振兴会;
关键词
TOTAL-ENERGY CALCULATIONS; CHEMICAL-STRUCTURE; PROGRAM; XPS; CHEMISTRY; ROUTE; CORE;
D O I
10.1038/s41557-022-01071-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Substituting carbon with silicon in organic molecules and materials has long been an attractive way to modify their electronic structure and properties. Silicon-doped graphene-based materials are known to exhibit exotic properties, yet conjugated organic materials with atomically precise Si substitution have remained difficult to prepare. Here we present the on-surface synthesis of one- and two-dimensional covalent organic frameworks whose backbones contain 1,4-disilabenzene (C4Si2) linkers. Silicon atoms were first deposited on a Au(111) surface, forming a AuSix film on annealing. The subsequent deposition and annealing of a bromo-substituted polyaromatic hydrocarbon precursor (triphenylene or pyrene) on this surface led to the formation of the C4Si2-bridged networks, which were characterized by a combination of high-resolution scanning tunnelling microscopy and photoelectron spectroscopy supported by density functional theory calculations. Each Si in a hexagonal C4Si2 ring was found to be covalently linked to one terminal Br atom. For the linear structure obtained with the pyrene-based precursor, the C4Si2 rings were converted into C4Si pentagonal siloles by further annealing.
引用
收藏
页码:136 / +
页数:17
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