Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy

被引：2
作者：
Krivobok, V. S. [1 ,2 ]
Pashkeev, D. A. [1 ]
Klekovkin, A. V. [1 ]
Minaev, I. I. [1 ]
Savin, K. A. [1 ]
Eroshenko, G. N. [1 ]
Goncharov, A. E. [1 ,2 ]
Nikolaev, S. N. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
[2] Orion R&D Co, Moscow 143090, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / 09期
基金：
英国科研创新办公室;
关键词：
type-II superlattice; molecular-beam epitaxy; reflection high-energy electron diffraction; atomic-force microscopy; X-ray diffraction analysis; OPTICAL-PROPERTIES; II SUPERLATTICE; MBE GROWTH; OPTIMIZATION; INAS;
D O I：
10.3103/S1068335623090051
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The problems of growing short-period InAs/GaSb superlattices on GaSb (100) substrates by molecular-beam epitaxy are studied. For InAs/GaSb epitaxial heterostructures, a method for forming "InSb-like" atomically smooth interfaces with an ultrathin intermediate In(As)Sb layer is developed. This technique allowed growth of a short-period superlattice containing 50 InAs/GaSb periods. In situ growth control using high-energy electron diffraction and post-growth studies of the superlattice using atomic-force microscopy and X-ray diffraction confirm the efficiency of the technique for fabricating detector structures based on type-II superlattices.
引用
收藏
页码：396 / 402
页数：7
相关论文
共 31 条
  • [1] Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures
    Bennett, BR
    Shanabrook, BV
    Twigg, ME
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) : 2157 - 2161
  • [2] GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .2.
    BOOKER, GR
    KLIPSTEIN, PC
    LAKRIMI, M
    LYAPIN, S
    MASON, NJ
    MURGATROYD, IJ
    NICHOLAS, RJ
    SEONG, TY
    SYMONS, DM
    WALKER, PJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 495 - 502
  • [3] Surface reconstruction phase diagrams for InAs, AlSb, and GaSb
    Bracker, AS
    Yang, MJ
    Bennett, BR
    Culbertson, JC
    Moore, WJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 384 - 392
  • [4] X-ray diffraction analysis of quantum-size ZnMgSSe/ZnSe/ZnMgSSe nanostructures
    Georgobiani, A. N.
    Martovitskii, V. P.
    Perlov, E. V.
    Tokareva, V. P.
    [J]. BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2010, 37 (04) : 119 - 122
  • [5] THEORETICAL PERFORMANCE OF VERY LONG-WAVELENGTH INAS/INXGA1-XSB SUPERLATTICE BASED INFRARED DETECTORS
    GREIN, CH
    CRUZ, H
    FLATTE, ME
    EHRENREICH, H
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (20) : 2530 - 2532
  • [6] Exploring optimum growth for high quality InAS/GaSb type-II superlattices
    Haugan, HJ
    Grazulis, L
    Brown, GJ
    Mahalingam, K
    Tomich, DH
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 261 (04) : 471 - 478
  • [7] Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb
    Johnson, JL
    Samoska, LA
    Gossard, AC
    Merz, JL
    Jack, MD
    Chapman, GR
    Baumgratz, BA
    Kosai, K
    Johnson, SM
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) : 1116 - 1127
  • [8] As-soak control of the InAs-on-GaSb interface
    Kaspi, R
    Steinshnider, J
    Weimer, M
    Moeller, C
    Ongstad, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 544 - 549
  • [9] Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice
    Katayama, Haruyoshi
    Takekawa, Tomoko
    Kimata, Masafumi
    Inada, Hiroshi
    Iguchi, Yasuhiro
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2015, 70 : 53 - 57
  • [10] Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection
    Khoshakhlagh, A.
    Plis, E.
    Myers, S.
    Sharma, Y. D.
    Dawson, L. R.
    Krishna, S.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1901 - 1904
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