Spanning the Spectrum: High-Performance Signal Source Design for the Millimeter-Wave Age

The millimeter-wave (mm-wave) frequency range is consumer wireless technology's next frontier. Next-generation cellular technologies demand ever-increasing data rates, reduced latency, and robust service for a massive number of users. The mm-wave wireless systems operating in the frequency range from 10 to 100 GHz have the potential to satisfy the requirements presented by these consumer demands [1]. High carrier frequencies offer increased communication bandwidths for improved throughput with relatively small fractional bandwidths. Furthermore, because the development of mm-wave wireless and cellular technologies is in its infancy, relatively few external interferers exist at these frequencies. Thanks to the continued scaling of CMOS devices and increased transit and maximum frequencies, the integration of high-performance mm-wave transceivers is more viable than ever before. Transceiver integration further benefits from the decreased size of passive devices with high-frequency operation, decreasing silicon area and minimizing parasitic effects. Thanks to these benefits, 5G hardware research has focused on exploring limitations and establishing design principles for integrated CMOS mm-wave front ends.