MEMS Shielded Capacitive Pressure and Force Sensors with Excellent Thermal Stability and High Operating Temperature

被引:8
作者
Ghanam, Muhannad [1 ]
Goldschmidtboeing, Frank [1 ]
Bilger, Thomas [1 ]
Bucherer, Andreas [1 ]
Woias, Peter [1 ]
机构
[1] Univ Freiburg, Lab Design Microsyst, IMTEK, D-79106 Freiburg, Germany
关键词
capacitive pressure sensors; capacitive force sensors; high-temperature applications; temperature drift; SILICON; FABRICATION;
D O I
10.3390/s23094248
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, we present an innovative manufacturing process for the production of capacitive pressure and force sensors with excellent thermal stability for high-temperature applications. The sensors, which are manufactured from a stack of two silicon chips mounted via with gold-silicon (Au-Si) or aluminum-silicon (Al-Si) eutectic bonding, are shielded, miniaturized, and allow an operating temperature of up to 500 degrees C. Compared to conventional methods, the greatest benefit of the manufacturing process is that different sensor dimensions can be produced in the same batch for a wide measuring range, from mN to kN. The characterization of the realized sensors shows a high linearity and a low temperature drift of 99.992% FS and -0.001% FS/K at 350 degrees C, as well as a nonlinearity of 0.035% FS and a temperature drift of -0.0027% FS/K at 500 degrees C.
引用
收藏
页数:16
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