Two-dimensional modeling of the saturation characteristics of laser irradiation on HgCdTe mid-wave infrared photovoltaic devices

被引：1

作者：

Sang Maosheng ^{[1
,3
]}

Yang Fan ^{[1
,3
]}

Xu Guoqing ^{[1
]}

Qiao Hui ^{[1
]}

Yang Xiaoyang ^{[1
]}

Li Xiangyang ^{[1
]}

Yang Pengling ^{[2
]}

Wang Dahui ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

[2] Northwest Nucl Technol Inst, Xian 710024, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

EARTH AND SPACE: FROM INFRARED TO TERAHERTZ, ESIT 2022 | 2023年 / 12505卷

关键词：

Photodetector; HgCdTe; laser irradiation; saturation threshold; numerical simulation; DAMAGE;

D O I：

10.1117/12.2665517

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

The laser response of HgCdTe medium-wave photovoltaic device is numerically simulated in this research. The simulations are carried out by considering the carrier electrical properties and a simulation model is obtained, and simulation results are in general conformity with the experimental results under both strong and weak illumination. The saturation threshold increases as the operating temperature of the device decreases, according to the current response characteristics of the device. The contact resistance of device is calculated and discussed, and the optimized device structure are given to point out the direction of parameter optimization. Furthermore, two-dimensional simulations demonstrate that the electrode size and composition gradient and reverse voltage has a considerable impact on the photocurrent, which is an essential problem to address in the development of high saturation threshold mid-wave infrared HgCdTe photovoltaic devices.

引用

页数：12

共 15 条

[1] IRREVERSIBLE LASER DAMAGE IN IR DETECTOR MATERIALS [J].