Wideband and Efficient 256-GHz Subharmonic-Based FMCW Radar Transceiver in 130-nm SiGe BiCMOS Technology

被引:13
|
作者
Hasan, Raqibul [1 ]
Eissa, Mohamed Hussein [1 ]
Ahmad, Wael Abdullah [1 ,2 ]
Ng, Herman Jalli [1 ,3 ]
Kissinger, Dietmar [4 ]
机构
[1] Leibniz Inst Innovat Mikroelekt IHP, D-15236 Frankfurt, Germany
[2] Keysight Technol, Santa Rosa, CA 95403 USA
[3] Karlsruhe Univ Appl Sci, Fac Elect Engn & Informat Technol, D-76133 Karlsruhe, Germany
[4] Univ Ulm, Inst Elect Devices & Circuits, D-89081 Ulm, Germany
关键词
bipolar complementary metal-oxide-semiconductor (BiCMOS); FMCW; folded dipole antenna; frequency doubler (FD); frequency multiplier; frequency quadrupler (FQ); Gilbert cell (GC); radar; range measurement; silicon-germanium (SiGe); subharmonic mixer; ON-CHIP ANTENNAS; DBM OUTPUT; RECEIVER; SENSOR; ARRAY; POWER; WAVE;
D O I
10.1109/TMTT.2022.3207995
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a fully integrated single-channel bistatic frequency-modulated continuous-wave (FMCW) radar transceiver (TRX) that operates at a center frequency of 256 GHz. The main focus of this work is to realize a wideband and efficient radar TRX that offers high resolution of target detection in the short-range FMCW radar sensing application. The radar TRX chip is designed and manufactured using the 130 nm silicon - germanium (SiGe) bipolar complementary metal-oxide-semiconductor (BiCMOS) technology which offers heterojunction bipolar transistors (HBTs) with f(T)/f(MAX) of 300/500 GHz. The transmitter (TX) of the radar TRX is based on a fundamentally operated multiplier-by-8 chain architecture that offers a 3-dB bandwidth of around 65 GHz with a saturated output power of -5.4 dBm. On the other hand, the receiver (RX) is based on a subharmonic architecture that provides a conversion gain (CG) of 10.4 dB with an average noise figure (NF) of 23.5 dB. This TRX is realized with two integrated on-chip folded dipole antennas. The antenna offers high antenna gain and radiation efficiency due to the use of the selective localized backside etching (LBE) technique. This chip consumes 305 mW of power from a 3.3-V supply and occupies a silicon area of 3.3 mm(2). The radar range measurement is performed in an anechoic chamber, and it shows the maximum dynamic range (DR) of around 34 dB at 1-m range of the target.
引用
收藏
页码:59 / 70
页数:12
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