Gamma-Ray Irradiation Induced Ultrahigh Room-Temperature Ferromagnetism in MoS2 Sputtered Few-Layered Thin Films

被引：25

作者：

Anbalagan, Aswin Kumar ^{[1
]}

Hu, Fang-Chi ^{[1
]}

Chan, Weng Kent ^{[2
]}

Gandhi, Ashish Chhaganlal ^{[3
,4
]}

Gupta, Shivam ^{[5
]}

Chaudhary, Mayur ^{[5
]}

Chuang, Kai-Wei ^{[6
]}

Ramesh, Akhil K. ^{[5
,7
]}

Billo, Tadesse ^{[8
]}

Sabbah, Amr ^{[9
,10
]}

Chiang, Ching-Yu ^{[11
]}

Tseng, Yuan-Chieh ^{[5
]}

Chueh, Yu-Lun ^{[5
]}

Wu, Sheng Yun ^{[3
]}

Tai, Nyan-Hwa ^{[5
]}

Chen, Hsin-Yi Tiffany ^{[1
,2
]}

Lee, Chih-Hao ^{[1
,6
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Coll Semicond Res, Hsinchu 30013, Taiwan

[3] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan

[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[5] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[6] Natl Tsing Hua Univ, Inst Nucl Engn & Sci, Hsinchu 30013, Taiwan

[7] Indian Inst Technol Delhi, Ctr Appl Res Elect, New Delhi 110016, India

[8] European Synchrotron Radiat Facil, F-38000 Grenoble, France

[9] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[10] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10617, Taiwan

[11] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan

来源：

ACS NANO | 2023年 / 17卷 / 07期

关键词：

MoS2; 2D materials; SQUID; gamma-ray irradiation; density functional theory calculations; ferromagnetism; RAMAN;

D O I：

10.1021/acsnano.2c11955

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Defect engineering is of great interest to the two-dimensional (2D) materials community. If nonmagnetic transition-metal dichalcogenides can possess room-temperature ferromagnetism (RTFM) induced by defects, then they will be ideal for application as spintronic materials and also for studying the relation between electronic and magnetic properties of quantum-confined structures. Thus, in this work, we aimed to study gamma-ray irradiation effects on MoS2, which is diamagnetic in nature. We found that gamma-ray exposure up to 9 kGy on few-layered (3.5 nm) MoS2 films induces an ultrahigh saturation magnetization of around 610 emu/cm(3) at RT, whereas no significant changes were observed in the structure and magnetism of bulk MoS2 (40 nm) films even after gamma-ray irradiation. The RTFM in a few-layered gamma-ray irradiated sample is most likely due to the bound magnetic polaron created by the spin interaction of Mo 4d ions with trapped electrons present at sulfur vacancies. In addition, density functional theory (DFT) calculations suggest that the defect containing one Mo and two S vacancies is the dominant defect inducing the RTFM in MoS2. These DFT results are consistent with Raman, X-ray photoelectron spectroscopy, and ESR spectroscopy results, and they confirm the breakage of Mo and S bonds and the existence of vacancies after gamma-ray irradiation. Overall, this study suggests that the occurrence of magnetism in gamma-ray irradiated MoS2 few-layered films could be attributed to the synergistic effects of magnetic moments arising from the existence of both Mo and S vacancies as well as lattice distortion of the MoS2 structure.

引用

页码：6555 / 6564

页数：10

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