Enhancing the Thermoelectric Power Factor by Lowering the Electrical Resistivity of Bi2Se3/NaI Composites Prepared by Solid-State Reaction

被引:0
|
作者
Vivekananda [1 ]
Prarthana, P. K. [1 ]
Archana, M. [1 ]
Gowrishree, R. [1 ]
Bhat, Tejashree [1 ]
Prakruthi, V [1 ]
Keerthana, N. S. [1 ]
Sharath, P. [1 ]
Sulthana, T. Tabassum [1 ]
Thulasi, R. [1 ]
Naidu, Vaishnavi S. [1 ]
Shilpa, V. S. [1 ]
Vinay, D. [1 ]
Nalina, S. [1 ]
Potadar, Rajeev R. [1 ]
Hegde, Ganesh Shridhar [1 ]
Prabhu, A. N. [2 ]
Rao, Ashok [2 ]
Shanubhogue, U. Deepika [2 ]
Putran, Suchitra [2 ]
Murari, M. S. [3 ]
Jahnavi, K. R. [4 ]
Kumar, Sujeet [5 ]
机构
[1] KLE Soc S Nijalingappa Coll, Dept Phys, Rajaji Nagara 560010, Bengaluru, India
[2] Manipal Acad Higher Educ, Dept Phys, Manipal Inst Technol, Manipal 576104, India
[3] Mangalore Univ, Dept Phys, DST PURSE Lab, Mangalore 574199, Karnataka, India
[4] Natl Coll Jayanagar, Post Grad Studies & Res Math, Bangalore 560070, India
[5] NITTE Coll Pharmaceut Sci, Dept Pharmaceut Chem, Yelahanka 560064, Bengaluru, India
关键词
X-ray diffraction; solid-state reaction; electrical resistivity; Seebeck coefficient; power factor;
D O I
10.1007/s11664-023-10725-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current work is focused on the thermoelectric properties of Bi2Se3/NaI synthesized by solid-state reaction. X-ray diffraction data show that Bi2Se3/NaI displays a hexagonal crystal structure with the R 3 m space group. Using a small polaron hopping model, the electrical resistivity data in the high-temperature range (30-425 degrees C) have been explained. The antisite defects with uncharged substitution in the examined crystals simultaneously affect the electrical resistivity and the Seebeck coefficient values when NaI is introduced to the Bi2Se3 matrix. The electrical resistivity of Bi2Se3/6% NaI is 1.2 times lower than that of pure Bi2Se3. Compared to pure Bi2Se3, the Seebeck coefficient and power factor values of Bi2Se3/2% NaI are found to be 1.33 and 1.5 times higher, respectively.
引用
收藏
页码:8076 / 8085
页数:10
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