Effect of Rear Contact Coverage and Improvement of Efficiency of Crystalline p-Si Solar Cell Compared to State of Art PERC Cell

被引：4
作者：
Banerjee, S. [1 ]
Askari, S. S. A. [2 ]
Das, M. K. [3 ]
机构：
[1] NSHM Inst Engn & Technol, Dept Elect & Commun Engn, Durgapur 713212, W Bengal, India
[2] IIT ISM Dhanbad, Dept Elect Engn, Dhanbad 826004, Jharkhand, India
[3] IIT ISM Dhanbad, Ctr Excellence Renewable Energy CERE, Dept Elect Engn, Dhanbad 826004, Jharkhand, India
来源：
IEEE ACCESS | 2023年 / 11卷
关键词：
Al2O3; crystalline silicon; local contact; numerical modeling; solar cell; surface passivation; SURFACE PASSIVATION; AL2O3; FABRICATION; PARAMETERS; ALD;
D O I：
10.1109/ACCESS.2023.3264900
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A device simulation model for localized contact rear side oxide-passivated solar cell has been developed to study the effects of rear contact coverage and fixed charge density dependent field-effect passivation on the performance of p-Si solar cell. Models describing hetero-interface physics related to metal-semiconductor, metal-oxide-semiconductor junctions and interface recombination are considered in the simulation, results of which are verified with the reported experimental data. A detailed analysis of the effect of surface passivation is presented and an analytical design with optimized set of parameters is outlined for fabricating the cell. The result shows that the efficiency of the solar cell can be substantially enhanced by controlling parameters mainly the ratio between localized back contact to the non-contact area and the fixed charge density at the oxide-interface. A maximum efficiency of similar to 25% for a crystalline p-Si solar cell with a comparatively lower lifetime can be obtained by a suitable choice of the design parameters with an added suitable choice of doping concentration in the emitter and absorber and the oxide layer thickness.
引用
收藏
页码：34999 / 35006
页数：8
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