4H-SiC integrated circuits for high-temperature applications

被引：5

作者：

Zhenyu, Tang ^{[1
]}

Xiaoyan, Tang ^{[1
]}

Yimeng, Zhang ^{[1
]}

Pu, Zhao ^{[1
]}

Yuyin, Sun ^{[1
]}

Yuming, Zhang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 605卷

关键词：

B2; Semiconducting silicon compounds; A1; High temperature; B3; Integrated circuit; Field effect transistors;

D O I：

10.1016/j.jcrysgro.2022.127060

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to take full advantage of the properties of SiC (silicon carbide) materials at high temperatures, the characteristics of common-source and differential amplifier circuits composed of NMOSFET and PMOSFT based on 4H-SiC have been presented at 25 degrees C and 300 degrees C. The characteristics of NMOSFET and PMOSFET based on 4H-SiC are presented from 25 degrees C to 500 degrees C. The common-source amplifier displayed gain of 37 dB and GBW (gain-bandwidth product) of 125 kHz at 25 degrees C. When the temperature increases to 300 degrees C, the gain decreases to 32 dB and the GBW increases to 600 kHz. The differential amplifier displayed gain of 30 dB and GBW of 25 kHz at 25 degrees C. When the temperature increases to 300 degrees C, the gain increases to 34.6 dB and the GBW increases to 130 kHz. Both circuits show good characteristics, indicating that SiC materials and related devices can be applied to high temperature environment.

引用

页数：6

共 13 条

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