Estimation of hole mobility in hydrogen-terminated diamond MOSFET with high-k stacked gate dielectrics

被引：3

作者：

Li, Yao ^{[1
]}

Wang, Xi

Pu, Hongbin

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2023年 / 603卷

基金：

中国国家自然科学基金;

关键词：

A1; Surfaces; B1; Diamond; Oxides; B2; Semiconducting materials; Dielectric materials; B3; Field effect transistors; INTERFACE-ROUGHNESS SCATTERING; FIELD-EFFECT TRANSISTORS; ELECTRON-MOBILITY; PHYSICAL MODEL;

D O I：

10.1016/j.jcrysgro.2022.127010

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to control the accumulated two-dimensional hole gas (2DHG) of high density in hydrogen-terminated diamond (H-diamond) metal oxide-semiconductor field effect transistors (MOSFETs), the high -k stacked gate dielectric is extensively explored. However, the stacked gate dielectric introduces additional remote Coulomb scattering (RCS) and remote interface roughness scattering (RIRS) to 2DHG, which result from the fixed charges in the stacked gate dielectric and the rough interface between stacked gate dielectrics. Therefore, we model the RCS and RIRS in H-diamond MOSFETs with high -k stacked gate dielectrics for the first time and investigate their dependences on structural and physical parameters of the devices. Our research may provide some instructions on the understanding of the carrier transport properties in H-diamond MOSFETs.

引用

页数：5

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