Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy

被引：1
|
作者：
Sugawa, S. [1 ]
Yokogawa, R. [1 ,2 ]
Ogura, A. [1 ,2 ]
机构：
[1] Meiji Univ, Sch Sci & Technol, 1-1 Higashimita,Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[2] Meiji Univ, Meiji Renewable Energy Lab, Kawasaki, Kanagawa 2148571, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期
关键词：
semiconductor; Raman spectroscopy; SiGe; thermal property; nanowire; THERMOELECTRIC-POWER; SILICON; SCATTERING; DEVICES; GE;
D O I：
10.35848/1347-4065/ad1bc0
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe) nanowires (NWs). The temperature in SiGe NWs was calculated using the relationship between Raman shift omega and temperature T (d omega/d T) to evaluate the correlation between the thermal transport mechanism and SiGe NWs structure. We clarified that the thermal conductivity of the SiGe NWs decreases as the wire width becomes narrower. Also, a positional dependence of the thermal conductivity properties of the SiGe NWs was observed by laser power sweep Raman spectroscopy.
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页数：4
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