Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy

被引：1

作者：

Sugawa, S. ^{[1
]}

Yokogawa, R. ^{[1
,2
]}

Ogura, A. ^{[1
,2
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, 1-1 Higashimita,Tama Ku, Kawasaki, Kanagawa 2148571, Japan

[2] Meiji Univ, Meiji Renewable Energy Lab, Kawasaki, Kanagawa 2148571, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期

关键词：

semiconductor; Raman spectroscopy; SiGe; thermal property; nanowire; THERMOELECTRIC-POWER; SILICON; SCATTERING; DEVICES; GE;

D O I：

10.35848/1347-4065/ad1bc0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using laser power sweep Raman spectroscopy, this research reports that the thermal transport changes with the wire width of silicon-germanium (SiGe) nanowires (NWs). The temperature in SiGe NWs was calculated using the relationship between Raman shift omega and temperature T (d omega/d T) to evaluate the correlation between the thermal transport mechanism and SiGe NWs structure. We clarified that the thermal conductivity of the SiGe NWs decreases as the wire width becomes narrower. Also, a positional dependence of the thermal conductivity properties of the SiGe NWs was observed by laser power sweep Raman spectroscopy.

引用

页数：4

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