High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching

被引:2
作者
Paiva, Aislan Esmeraldo [2 ]
Gerlt, Michael S. [3 ,4 ]
Laubli, Nino F. [1 ]
Prochukhan, Nadezda [2 ]
Vasquez, Jhonattan Frank Baez [2 ]
Schierle, Gabriele S. Kaminski [1 ]
Morris, Michael A. [2 ]
机构
[1] Univ Cambridge, Dept Chem Engn & Biotechnol, Cambridge CB3 0AS, England
[2] Trinity Coll Dublin, AMBER Res Ctr, Sch Chem, Dublin D02 CP49, Ireland
[3] Lund Univ, Dept Biomed Engn, S-22363 Lund, Sweden
[4] Swiss Fed Inst Technol, Dept Mech & Proc Engn, CH-8092 Zurich, Switzerland
基金
瑞士国家科学基金会; 爱尔兰科学基金会;
关键词
block copolymer; metal infiltration; DRIE; high aspect ratio; porous silicon; COPOLYMER THIN-FILM; BLOCK-COPOLYMER; POROUS MATERIALS; HARD MASK; SILICON; FABRICATION; REFLECTION; ANTIREFLECTION; OPTIMIZATION; LITHOGRAPHY;
D O I
10.1021/acsami.3c09863
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The reliable and regular modification of the surface properties of substrates plays a crucial role in material research and the development of functional surfaces. A key aspect of this is the development of the surface pores and topographies. These can confer specific advantages such as high surface area as well as specific functions such as hydrophobic properties. Here, we introduce a combination of nanoscale self-assembled block-copolymer-based metal oxide masks with optimized deep reactive ion etching (DRIE) of silicon to permit the fabrication of porous topographies with aspect ratios of up to 50. Following the evaluation of our procedure and involved parameters using various techniques, such as AFM or SEM, the suitability of our features for applications relying on high light absorption as well as efficient thermal management is explored and discussed in further detail.
引用
收藏
页码:57960 / 57969
页数:10
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