A Resistorless Precision Curvature-Compensated Bandgap Voltage Reference Based on the VGO Extraction Technique

被引：0

作者：

Adjei, Daniel ^{[1
]}

Gadogbe, Bryce ^{[1
]}

Chen, Degang ^{[1
]}

Geiger, Randall ^{[1
]}

机构：

[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

来源：

2023 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS | 2023年

关键词：

resistorless voltage reference; curvaturecompensation; low-temperature coefficient (TC); PPM/DEGREES-C; CMOS VOLTAGE;

D O I：

10.1109/ISCAS46773.2023.10181798

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper presents a resistorless curvaturecompensated bandgap voltage reference (BGR). The proposed method, using ratioed transistors and the inverse function technique, attempts to extract VGO, the bandgap voltage of silicon, by canceling out both the T and TlnT terms in the temperature characteristic of the bipolar junction transistor's (BJT) baseemitter voltage, VBE. The proposed design is implemented in the TSMC 180nm process. Simulation results show that the circuit can achieve temperature coefficients (TC) of less than 4.7ppm/degrees C from -20 degrees C to 80 degrees C over process variation and mismatch.

引用

页数：5

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