The rise of two-dimensional tellurium for next-generation electronics and optoelectronics

被引:26
作者
Zhu, Tao [1 ,2 ]
Zhang, Yao [1 ,2 ]
Wei, Xin [2 ]
Jiang, Man [1 ]
Xu, Hua [2 ]
机构
[1] Northwest Univ, Inst Photon & Photon Technol, Int Collaborat Ctr Photoelect Technol & Nano Funct, Sch Phys,State Key Lab Photon Technol Western Chin, Xian 710069, Peoples R China
[2] Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Key Lab Adv Energy Devices, Key Lab Appl Surface & Colloid Chem,Minist Educ, Xian 710119, Peoples R China
基金
中国国家自然科学基金;
关键词
two-dimensional materials; tellurium; van der Waals heterostructure; electronic; optoelectronic; FIELD-EFFECT TRANSISTORS; GRAPHENE; SEMICONDUCTOR; PHOTODETECTORS; HETEROJUNCTION; FABRICATION; PHOSPHORUS; PROSPECTS; FILMS;
D O I
10.1007/s11467-022-1231-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Single-element two-dimensional (2D) tellurium (Te) which possesses an unusual quasi-one-dimensional atomic chain structure is a new member in 2D materials family. 2D Te possesses high carrier mobility, wide tunable bandgap, strong light-matter interaction, better environmental stability, and strong anisotropy, making Te exhibit tremendous application potential in next-generation electronic and optoelectronic devices. However, as an emerging 2D material, the research on fundamental property and device application of Te is still in its infancy. Hence, this review summarizes the most recent research progresses about the new star 2D Te and discusses its future development direction. Firstly, the structural features, basic physical properties, and various preparation methods of 2D Te are systemically introduced. Then, we emphatically summarize the booming development of 2D Te-based electronic and optoelectronic devices including field effect transistors, photodetectors and van der Waals heterostructure photodiodes. Finally, the future challenges, opportunities, and development directions of 2D Te-based electronic and optoelectronic devices are prospected.
引用
收藏
页数:24
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