Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar (11(2)over-bar2) InGaN/GaN Multi-Quantum Wells

被引：3

作者：

Sheen, Mi-Hyang ^{[1
]}

Lee, Yong-Hee ^{[1
]}

Jang, Jongjin ^{[2
]}

Baek, Jongwoo ^{[1
]}

Nam, Okhyun ^{[2
]}

Yang, Cheol-Woong ^{[3
]}

Kim, Young-Woon ^{[1
]}

机构：

[1] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 08826, South Korea

[2] Tech Univ Korea, LED Technol Ctr, Dept Nanoopt Engn, Siheung Si 15073, South Korea

[3] SungKyunKwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea

来源：

NANOMATERIALS | 2023年 / 13卷 / 13期

基金：

新加坡国家研究基金会;

关键词：

semi-polar GaN; TEM-cathodoluminescence; indium concentration; surface undulation; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; INDIUM INCORPORATION; SAPPHIRE; GAN; DEFECTS; PLANAR; PHOTOLUMINESCENCE; ORIENTATION; DEPENDENCE;

D O I：

10.3390/nano13131946

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Surface undulation was formed while growing InGaN/GaN multi-quantum wells on a semi-polar m-plane (1-100) sapphire substrate. Two distinct facets, parallel to (11 (2) over bar2) and (01 (1) over bar 11), were formed in the embedded multi-quantum wells (MQWs). The structural and luminescence characteristics of the two facets were investigated using transmission electron microscopy equipped with cathodoluminescence. Those well-defined quantum wells, parallel and slanted to the growth plane, showed distinct differences in indium incorporation from both the X-ray yield and the contrast difference in annular darkfield images. Quantitative measurements of concentration in (01 (1) over bar1) MQWs show an approximately 4 at% higher indium incorporation compared to the corresponding (11 (2) over bar2) when the MQWs were formed under the same growth condition.

引用

页数：7

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