Linear and non-linear optical properties of (Ge1S2)100-X(As2Te3)X (0 ≤ x ≤ 100) films

被引：4

作者：

Alsaif, N. A. M. ^{[1
]}

Aly, K. A. ^{[2
]}

Ibraheem, Awad A. ^{[3
,4
]}

机构：

[1] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Phys, Riyadh, Saudi Arabia

[2] Univ Jeddah, Coll Sci & Arts Khulais, Phys Dept, Jeddah, Saudi Arabia

[3] Al Azhar Univ, Phys Dept, Assiut Branch, Assiut 71524, Egypt

[4] King Khalid Univ, Phys Dept, Abha, Saudi Arabia

来源：

OPTICAL MATERIALS | 2024年 / 149卷

关键词：

Chalcogenides; Film absorption; Band gap; Optical devices; THIN-FILMS; GE-S; ELECTRONIC POLARIZABILITY; CONSTANTS; CONDUCTIVITY; DEPENDENCE; BASICITY; GLASSES; CO;

D O I：

10.1016/j.optmat.2024.114972

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current investigation clarifies the optoelectronics studies for (Ge2S8)100-x(As2Te3)x (GSAT) (0 <= x <= 100) noncrystalline films. The GSAT glassy system has been synthesised using the conventional melting quench method. GAST films were thermally deposited on chemically washed glass substrates. The reflectance spectra were used to precisely evaluate the absorbance (x), index of refraction (n), and film thicknesses (t) for GSAT glasses. The values of the optical band gap Eg are lessening; nevertheless, the n values rise with the enhancement of As2Te3 at. %. Sellmeier's dispersion model helps one to estimate the dispersion parameters vis. the oscillator position (lambda o) and strength (So), the dispersion energy (Ed), and the static index of refraction (no). Furthermore, the compositional dependence of the dielectric optical parameters has been investigated. The obtained results suggest that GSAT films are suitable for many optical devices, like optical sensors, switches, lenses, mirrors, infrared sensors, and detectors.

引用

页数：9

共 66 条

[1] Physical characterization and crystallization kinetics of amorphous BiSe chalcogenide glasses [J].

Ahmad, Mahmoud ;

Aly, K. A. ;

Dahshan, A. ;

Saddeek, Y. ;

Zakaly, Hesham M. H. ;

Abd Elnaeim, A. M. ;

Ene, Antoaneta .

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2022, 16 :1114-1121

[2] Study of the physical properties of quaternary Ge-As-Te-Pb thin films for technology applications [J].

Ahmad, Mahmoud ;

Aly, K. A. ;

Dahshan, A. ;

Soraya, M. M. ;

Saddeek, Yasser B. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2020, 126 (07)

[3] Tuning the dielectric behavior and energy storage properties of Mn/Co co-doped ZnO [J].

Ahsan, Hafiz Muhammad ;

Lal, Kanhya ;

Saleem, Murtaza ;

Mustafa, Ghulam M. ;

Khan, Muhammad Ahmad ;

Haidyrah, Ahmed S. ;

Atiq, Shahid .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 134 (134)

[4]

Alharbi W, 2018, CHALCOGENIDE LETT, V15, P75

[5] Optical properties of as-prepared and irradiated In-Cd-Se thin films [J].

Aly, K. A. ;

Dahshan, A. ;

Saddeek, Y. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (16) :12663-12673

[6] Compositional and topological analysis of Cu2xGe30-xS70-x lone pair semiconductors [J].

Aly, K. A. ;

Dahshan, A. ;

Saddeek, Y. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2021, 127 (08)

[7] Effect of Sn addition on the optical constants of Ge-Sb-S thin films based only on their measured reflectance spectra [J].

Aly, K. A. ;

Abdel-Rahim, Farid M. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 561 :284-290

[8] Optical constants for Ge30-xSe70Agx (0 ≤ x ≤ 30 at%) thin films based only on their reflectance spectra [J].

Aly, K. A. ;

Dahshan, A. ;

Yahia, I. S. .

PHILOSOPHICAL MAGAZINE, 2012, 92 (08) :912-924

[9] Optical constants of quaternary Ge-As-Te-In amorphous thin films evaluated from their reflectance spectra [J].

Aly, K. A. .

PHILOSOPHICAL MAGAZINE, 2009, 89 (12) :1063-1079

[10] Comment on the relationship between electrical and optical conductivity used in several recent papers published in the journal of materials science: materials in electronics [J].

Aly, Kamal A. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (06) :2889-2898

← 1 2 3 4 5 6 7 →