The effects of tungsten doping on the mechanical properties of Bi2O2Se

被引:1
作者
Li, Buda [1 ]
Li, Menglu [1 ]
Qi, Hangbo [1 ]
Zhao, Siqin [1 ]
Feng, Shan [1 ]
Zu, Xiaotao [1 ]
Qiao, Liang [1 ,2 ]
Xiao, Haiyan [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Phys, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
Bi2O2Se; density functional theory; electronic structure; mechanical properties; tungsten doping; HIGH-ELECTRON-MOBILITY; THERMAL-CONDUCTIVITY; STABILITY; STRENGTH; HARDNESS; RE;
D O I
10.1111/jace.19199
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we systemically investigate the effects of tungsten doping on the structural, electronic, and mechanical properties of Bi2O2Se by using the first-principles method. It is found that tungsten doping significantly influences the electronic structure and mechanical properties of Bi2O2Se. The electrons are distributed on the Fermi level, and the doped Bi2O2Se exhibits metallic-like character. Meanwhile, tungsten doping improves the ductility and toughness of Bi2O2Se and reduces its lattice thermal conductivity. This study demonstrates that tungsten doping is an effective method to engineer the physical properties of Bi2O2Se.
引用
收藏
页码:6026 / 6035
页数:10
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