Thermoelectrical Properties of ITO/Pt, In2O3/Pt and ITO/In2O3 Thermocouples Prepared with Magnetron Sputtering

被引：5

作者：

Liu, Yantao ^{[1
]}

Shi, Peng ^{[2
]}

Ren, Wei ^{[2
]}

Huang, Rong ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China

[2] Xi An Jiao Tong Univ, Key Lab Minist Educ & Int Ctr Dielect Res, Sch Elect & Informat Engn, Elect Mat Res Lab, Xian 710049, Peoples R China

来源：

CRYSTALS | 2023年 / 13卷 / 03期

关键词：

ITO thin film; In2O3 thin film; thermocouples; magnetron sputtering; TEMPERATURE-SENSITIVE-PAINT; THIN-FILM THERMOCOUPLES; HEAT-TRANSFER; CALIBRATION;

D O I：

10.3390/cryst13030533

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ITO/Pt, In2O3/Pt and ITO/In2O3 thermocouples were prepared by the radio frequency (RF) magnetron sputtering method. The XRD results showed that all the annealed ITO and In2O3 films annealed at high temperature present a cubic structure. Scanning electron microscope results showed that the thickness of the ITO and In2O3 films could reach 1.25 mu m and 1.21 mu m, respectively. The ITO/Pt and In2O3/Pt thin film thermocouples could obtain an output voltage of 68.7 mV and 183.5 mV, respectively, under a 900 degrees C temperature difference, and at the same time, the Seebeck coefficient reached 76.1 mu V/degrees C and 203.9 mu V/degrees C, respectively. For the ITO/In2O3 thermocouple, the maximum value of the output voltage was 165.7 mV under a 1200 degrees C temperature difference, and the Seebeck coefficient was 138.1 mu V/degrees C. Annealing under different atmosphere conditions under 1000 degrees C, including vacuum, air and nitrogen atmospheres, resulted in values of the Seebeck coefficient that were 138.2 mu V/degrees C, 135.5 mu V/degrees C and 115.7 mu V/degrees C, respectively.

引用

页数：11

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