Optoelectronic Properties of Ferroelectric Composites of Bi3.25La0.75Ti3O12 (BLT) and Co-Doped BLT Thin Films Modified by FeCo-Doped BLT

被引：0
作者：
Tang, Rui [1 ]
He, Rui [1 ]
Kim, Sangmo [2 ]
Bark, Chung Wung [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, Seongnam 13120, South Korea
[2] Sejong Univ, Dept Intelligent Mechatron Engn, Seoul 05006, South Korea
来源：
COATINGS | 2023年 / 13卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
ferroelectric; thin film; photocurrent density; bandgap;
D O I：
10.3390/coatings13071223
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Driven by the growing demand for renewable and clean energy, the photovoltaic effect of various solar cells and materials was investigated for the conversion of light energy into electricity. We modified the Bi3.25La0.75Ti3O12 (BLT) and Co-doped BLT (Co-BLT) composites with Fe and Co-doped BLT (FeCo-BLT) films to narrow the bandgap and increase visible light absorption, thereby improving the efficiency of the photovoltaic reaction. In this study, BLT and Co-BLT thin films were fabricated by off-axis sputtering and then modified with FeCo-BLT thin films to produce dual-ferroelectric, thin-film composite materials that improved the photovoltaic power generation performance. Photoelectric test results showed that the modified double-ferroelectric, thin-film composites had superior optoelectronic properties. The current density was significantly enhanced by modifying the BLT films with doped Fe and Co. Therefore, this modification improved the efficiency of ferroelectric thin-film photovoltaic reactions.
引用
收藏
页数：9
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