A Modified Carrier-Based DPWM With Reduced Switching Loss and Current Distortion for Vienna Rectifier

被引:15
作者
Pei, Yushuo [1 ,2 ]
Tang, Yu [1 ,2 ]
Xu, Hucheng [1 ,2 ]
Niu, Jincai [1 ,2 ]
Ge, Leijiao [3 ]
机构
[1] Hebei Univ Technol, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Hebei Key Lab Electromagnet Field & Elect Apparat, Tianjin 300401, Peoples R China
[3] Tianjin Univ, Tianjin 300350, Peoples R China
基金
中国国家自然科学基金;
关键词
Carrier-based discontinuous pulsewidth modulation (CB-DPWM); neutral-point (NP) voltage fluctuation; switching loss reduction; Vienna rectifier; zero-crossing distortion; DISCONTINUOUS PWM METHOD; 3-LEVEL; VOLTAGE; MODULATION; CAPABILITY; FREQUENCY; INJECTION; INVERTER; STRATEGY;
D O I
10.1109/TPEL.2023.3298827
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Carrier-based discontinuous pulse width modulation (PWM) is widely used in three-level ac/dc converters due to its features of higher efficiency and simpler implementation. However, the problems of switching losses, current distortion around zero-crossing points, and neutral-point (NP) voltage fluctuation are mutually coupled for the Vienna rectifier. Therefore, this article proposes a modified carrier-based discontinuous pulsewidth modulation (MCB-DPWM) scheme for the Vienna rectifier with improved zero-sequence voltage injection. The clamping range and clamping mode that suppress zero-crossing distortion are adjusted. Compared to continuous PWM and conventional discontinuous PWM, the proposed MCB-DPWM could effectively eliminate zerocrossing distortion and reduce the NP voltage fluctuation and switching loss, which means higher input current quality and efficiency. Moreover, it features a simpler implementation and less computational burden than space-vector-based PWM. Therefore, it is more suitable for high-frequency applications. Finally, the simulation and experimental results demonstrate that the proposed MCB-DPWM could reduce switching loss and current distortion with lower NP voltage fluctuation under different modulation indices.
引用
收藏
页码:12195 / 12206
页数:12
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