High efficiency GaN power amplifier with compact harmonic tuning network

被引:2
作者
Cai, Qi [1 ,2 ]
Gao, Zicheng [3 ]
Xue, Quan [4 ,5 ]
Che, Wenquan [4 ,5 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Telecommun & Informat Engn, Nanjing, Peoples R China
[2] Southeast Univ, State Key Lab Millimeter Waves, Nanjing, Peoples R China
[3] Univ Posts & Telecommun Nanjing, Coll Portland Inst, Nanjing, Peoples R China
[4] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou, Peoples R China
[5] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510006, Peoples R China
基金
中国国家自然科学基金;
关键词
drain efficiency; GaN power amplifier (PA); power added efficiency (PAE); second harmonic tuned (2HT); DESIGN;
D O I
10.1002/mop.34103
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One high efficiency second harmonic tuned (2HT) power amplifier (PA) with a compact multi-harmonic tuning network is presented. The proposed design method can drive the third harmonic impedance to short-circuit condition to achieve an ideal 2HT PA operation. Then the second harmonic impedance is controlled to proper position to improve the PA efficiency. Meanwhile, the fundamental impedance is also transferred to 50 omega load by making the most of this tuning network. Consequently, the proposed output network can be designed to a compact size and is suitable for high frequency PA applications. For demonstration, a PA using Cree CGH40010 GaN high-electron-mobility transistor is designed and fabricated at 3.5 GHz. The measured results show that the PA achieves peak power added efficiency of 72.8%, output power of 41.3 dBm and drain efficiency of 80.2% at 3.3 GHz.
引用
收藏
页数:6
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