La3Ga5SiO14:Cr3+: A broadband near-infrared phosphor induced by the two-site occupation of Cr3+

被引：29

作者：

Yuan, Honglei ^{[1
]}

Bai, Yanzhi ^{[2
]}

Wang, Gaoliang ^{[1
]}

Xu, Liuyang ^{[1
]}

Jia, Huanxia ^{[1
]}

Sun, Xianke ^{[1
]}

机构：

[1] Zhoukou Normal Univ, Sch Phys & Telecommun Engn, Zhoukou 466001, Peoples R China

[2] Henan Univ Technol, Coll Sci, Zhengzhou 450001, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2023年 / 49卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Near-infrared emission; Double lattice occupation; Phosphor; La3Ga5SiO14; Cr3+; LUMINESCENCE; STRATEGY;

D O I：

10.1016/j.ceramint.2023.02.093

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The broadband near-infrared phosphors are feasible to apply in real-time nondestructive examination. In this work, La3Ga5SiO14:Cr3+ phosphors with the broadband near-infrared emission have been synthesized using a solid state reaction method. Their optical characteristics were investigated via the measurements of ultra-violet-visible diffused reflectance and luminescence spectra. The occupations of Cr3+ ions in La3Ga5SiO14 host were inquired by the X-ray absorption near edge structure and electron paramagnetic resonance analyses. The results indicate that Cr3+ ions substitute octahedral and tetrahedral Ga3+ ions in La3Ga5SiO14 host, which results in a sharp emission band coming from the 2Eg -> 4A2g transitions of Cr3+ and a wide emission band coming from the 4T2g -> 4A2g transitions of Cr3+. The fabricated NIR pc-LED device by combining the synthesized La3Ga5SiO14:0.10Cr3+ phosphor with a blue LED chip indicates that the La3Ga5SiO14:Cr3+ phosphors have po-tential applications in nondestructive examination.

引用

页码：18000 / 18006

页数：7

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