In-situ scanning transmission electron microscopy study of Al-amorphous SiO2 layer-SiC interface

被引:2
|
作者
Adabifiroozjaei, Esmaeil [1 ,7 ]
Rastkerdar, Ebad [2 ]
Nemoto, Yoshihiro [3 ]
Nakayama, Yoshiko [3 ]
Nishimiya, Yuki [3 ]
Fronzi, Marco [4 ]
Yao, Yin [5 ]
Nguyen, Minh Triet [6 ]
Molina-Luna, Leopoldo [1 ]
Suzuki, Tohru S. S. [7 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, Adv Electron Microscopy AEM Div, D-64287 Darmstadt, Germany
[2] Univ Tabriz, Fac Mech Engn, Dept Mat Engn, Tabriz 5166616471, Iran
[3] Natl Inst Mat Sci NIMS, Nanostruct Characterizat Grp, Electron Microscopy Anal Stn, Tsukuba 3050047, Japan
[4] Shibaura Inst Technol, Coll Engn, SIT Lab, IGP, Tokyo 1358548, Japan
[5] UNSW Sydney, Mark Wainwright Analyt Ctr, Electron Microscopy Unit EMU, Sydney, NSW 2052, Australia
[6] UNSW Sydney, ARC Ctr Excellence Exiton Sci, Sch Phys, Sydney, NSW 2052, Australia
[7] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat RCFM, Tsukuba 3050047, Japan
关键词
SILICON-CARBIDE; ALLOY; THERMODYNAMICS; COMPOSITES; BAAL2SI2O8; OXIDATION; CONTACTS; METALS;
D O I
10.1007/s10853-023-08186-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Here, we present a comprehensive study on atomic-scale in-situ biasing/heating scanning transmission electron microscopy ((S)TEM) of Al-amorphous SiO2-SiC interface. The investigation includes electrical, chemical, and structural analysis of the interface at different temperatures (25-600 degrees C). The results show that at similar to 500 degrees C the electrical (three-orders of magnitude resistivity drop), chemical (dissolution of SiO2 amorphous layer), and microstructural features (e.g. formation of Al2O3, Si and Al4C3) of the interface start to change. According to the results, amorphous SiO2 dissolves in Al, leading to formation of alpha-Al2O3 and Si within the Al. In contrast, elemental interdiffusion (Al3+ reversible arrow Si4+) between Al and SiC occurs resulting in formation of Al4C3. From the results, we can infer that reaction mechanism between Al and crystalline SiC is different with that between Al and SiO2 amorphous phase. It is believed that structural similarities between SiC and Al4C3 play an important role in paving the way for elemental interdiffusion.
引用
收藏
页码:2456 / 2468
页数:13
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