Competitive Mechanism between Interfacial Electric Field and Built-In Electric Field for Silicon-Based Tribovoltaic Effect

被引：6

作者：

Gong, Likun ^{[1
,2
]}

Wang, Zhaozheng ^{[1
,2
]}

Luan, Ruifei ^{[1
,2
]}

Liu, Guoxu ^{[1
,2
]}

Fan, Beibei ^{[1
,3
]}

Feng, Yuan ^{[1
,3
]}

Cao, Jie ^{[1
,4
]}

Qi, Youchao ^{[1
,2
]}

Zhang, Chi ^{[1
,2
,3
]}

Zhang, Zhi ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, CAS Ctr Excellence Nanosci, Beijing Key Lab Micronano Energy & Sensor, Beijing 101400, Peoples R China

[2] Univ Chinese Acad Sci, Sch Nanosci & Engn, Beijing 100049, Peoples R China

[3] Guangxi Univ, Ctr Nanoenergy Res, Sch Phys Sci & Technol, Nanning 530004, Peoples R China

[4] Jiangsu Univ, Inst Intelligent Flexible Mechatron, Zhenjiang 212013, Peoples R China

来源：

ADVANCED FUNCTIONAL MATERIALS | 2024年 / 34卷 / 10期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

dielectric layer; direct-current; friction; semiconductor effect; single crystal silicon; GENERATOR;

D O I：

10.1002/adfm.202310703

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The tribovoltaic effect raises an emerging semiconductor energy technology and silicon-based tribovoltaic nanogenerator (Si-TVNG) has aroused great attentions. However, the electrical output of Si-TVNG is extremely unstable due to its complicated mechanism. Here, a competitive mechanism between the built-in electric field (BEF) and the interfacial electric field (IEF) is proposed to determine the current direction and magnitude of the Si-TVNG. The results indicate that the natural oxide layer, load pressure, and resistivity of Si significantly affect the IEF and BEF. The natural oxide layer can store surface charges by contact electrification, resulting in a IEF dominant carriers transport process. Conversely, lower resistivity and higher load pressure can reduce the contact resistance, thereby decreasing the surface charges caused by contact electrification and leading to a BEF dominant carrier transport process. This work contributes to deeper understandings of the tribovoltaic effect and further clarifies the theoretical mechanisms of carrier excitation and directional transport. This work proposes a competitive mechanism between the built-in electric field (BEF) and the interfacial electric field (IEF) to determine the current direction and magnitude of the silicon-based tribovoltaic nanogenerator. It contributes to deeper understandings of the tribovoltaic effect and further clarifies the theoretical mechanisms of carrier excitation and directional transport.image

引用

页数：8