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Anisotropic phonon thermal transport in two-dimensional layered materials
被引:12
|作者:
Cai, Yuxin
[1
]
Faizan, Muhammad
[1
]
Mu, Huimin
[2
]
Zhang, Yilin
[1
]
Zou, Hongshuai
[1
]
Zhao, Hong Jian
[2
]
Fu, Yuhao
[2
]
Zhang, Lijun
[1
]
机构:
[1] Jilin Univ, Int Ctr Computat Method & Software, Sch Mat Sci & Engn, State Key Lab Integrated Optoelect,Key Lab Automob, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Int Ctr Computat Method & Software, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
基金:
中国国家自然科学基金;
关键词:
thermal conductivity;
two-dimensional layered materials;
first-principles calculation;
Boltzmann transport theory;
APPROXIMATION;
NANOSHEETS;
ENERGY;
INSE;
D O I:
10.1007/s11467-023-1276-4
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Two-dimensional layered materials (2DLMs) have attracted growing attention in optoelectronic devices due to their intriguing anisotropic physical properties. Different members of 2DLMs exhibit unique anisotropic electrical, optical, and thermal properties, fundamentally related to their crystal structure. Among them, directional heat transfer plays a vital role in the thermal management of electronic devices. Here, we use density functional theory calculations to investigate the thermal transport properties of representative layered materials: beta-InSe, gamma-InSe, MoS2, and h-BN. We found that the lattice thermal conductivities of beta-InSe, beta-InSe, MoS2, and h-BN display diverse anisotropic behaviors with anisotropy ratios of 10.4, 9.4, 64.9, and 107.7, respectively. The analysis of the phonon modes further indicates that the phonon group velocity is responsible for the anisotropy of thermal transport. Furthermore, the low lattice thermal conductivity of the layered InSe mainly comes from low phonon group velocity and atomic masses. Our findings provide a fundamental physical understanding of the anisotropic thermal transport in layered materials. We hope this study could inspire the advancement of 2DLMs thermal management applications in next-generation integrated electronic and optoelectronic devices.
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页数:9
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