Amorphous As2S3 Doped with Transition Metals: An Ab Initio Study of Electronic Structure and Magnetic Properties

被引:2
|
作者
Kuznetsov, Vladimir G. G. [1 ]
Gavrikov, Anton A. A. [2 ]
Krbal, Milos [3 ]
Trepakov, Vladimir A. A. [1 ]
Kolobov, Alexander V. V. [2 ]
机构
[1] Ioffe Inst, 26 Polytech Skaya Str, St Petersburg 194021, Russia
[2] Herzen State Pedag Univ Russia, Inst Phys, 48 Moika Emb, St Petersburg 191186, Russia
[3] Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic
基金
俄罗斯基础研究基金会;
关键词
chalcogenides glasses; As2S3; transition metal doping; electronic structure and magnetism; density functional theory simulations; CHARGE-DENSITY WAVES; TOTAL-ENERGY CALCULATIONS; POPULATION ANALYSIS; OPTICAL-PROPERTIES; PSEUDOPOTENTIALS;
D O I
10.3390/nano13050896
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Crystalline transition-metal chalcogenides are the focus of solid state research. At the same time, very little is known about amorphous chalcogenides doped with transition metals. To close this gap, we have studied, using first principle simulations, the effect of doping the typical chalcogenide glass As2S3 with transition metals (Mo, W and V). While the undoped glass is a semiconductor with a density functional theory gap of about 1 eV, doping results in the formation of a finite density of states (semiconductor-to-metal transformation) at the Fermi level accompanied by an appearance of magnetic properties, the magnetic character depending on the nature of the dopant. Whilst the magnetic response is mainly associated with d-orbitals of the transition metal dopants, partial densities of spin-up and spin-down states associated with arsenic and sulphur also become slightly asymmetric. Our results demonstrate that chalcogenide glasses doped with transition metals may become a technologically important material.
引用
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页数:17
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