An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 μm CMOS Technology

A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a half-wave rectified sine wave or a half-wave rectified sawtooth wave. By applying each one of the waves, the performance of the PA is examined and PAE = 70% and PAE = 50% is achieved. Plus, the output power of the PA is about 26 dBm when the DC voltage supply is 1.8 V. Advanced design system and TSMC 0.18 mu m CMOS process are utilized to carry on the simulation.