An Approach to Increase Power-Added Efficiency in a 5 GHz Class E Power Amplifier in 0.18 μm CMOS Technology

被引：0
|
作者：
Jobaneh, Hemad Heidari [1 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, South Tehran Branch, Tehran, Iran
来源：
IET CIRCUITS DEVICES & SYSTEMS | 2023年 / 2023卷
关键词：
D O I：
10.1049/2023/5586912
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new approach to increasing the power-added efficiency (PAE) of a class E power amplifier (PA) is proposed in this paper. The PA operates at a 5 GHz frequency and a reactance compensation technique is utilized to maximize the bandwidth at the operating frequency. The driver stage creates either a half-wave rectified sine wave or a half-wave rectified sawtooth wave. By applying each one of the waves, the performance of the PA is examined and PAE = 70% and PAE = 50% is achieved. Plus, the output power of the PA is about 26 dBm when the DC voltage supply is 1.8 V. Advanced design system and TSMC 0.18 mu m CMOS process are utilized to carry on the simulation.
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页数：10
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