Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

被引:19
作者
Ren, Hongtao [1 ]
Xiang, Gang [2 ]
机构
[1] Liaocheng Univ, Sch Mat Sci & Engn, Hunan Rd 1, Liaocheng 252000, Peoples R China
[2] Sichuan Univ, Coll Phys, Wangjiang Rd 29, Chengdu 610064, Peoples R China
基金
中国国家自然科学基金;
关键词
strain engineering; ferromagnetism; transition metal trihalides; transition metal chalcogenides; transition metal phosphorous chalcogenides; wrinkle; flexible substrates; lattice mismatch; spintronics; straintronics; TRANSITION-METAL DICHALCOGENIDES; MAGNETIC STATES; MONOLAYER; MOS2; CRYSTAL; BILAYER; NANOSHEETS; GRAPHENE; DENSITY; ORDER;
D O I
10.3390/nano13162378
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (T-C) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
引用
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页数:23
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