Relationship Between Interface State and Dislocation Densities of Ag/TiO2/n-InP/Au Schottky Diodes

被引：0
作者：
Bilgili, Ahmet Kursat [1 ]
机构：
[1] Gazi Univ, Phys Dept, TR-06500 Ankara, Teknikokullar, Turkiye
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2023年 / 53卷 / 01期
关键词：
N-ss; TD; Ag; TiO2; n-InP; Schottky; LAYER; THICKNESS; ANGLE;
D O I：
10.1007/s13538-022-01244-y
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study, relationship between interface state and dislocation densities of Ag/TiO2/n-InP/Au Schottky barrier diodes with 60-& ANGS; and 120-& ANGS; TiO2 interface thickness is investigated. Samples are grown using the sputtering method and all investigations are made at room temperature. Interface state density (N-ss) is gained from current-voltage (I-V) characteristics. Structural dislocation densities are gained from high-resolution X-ray data. Different dislocation densities of TiO2 interfaces and their contribution to interface state density are discussed.
引用
收藏
页数：8
相关论文
共 30 条
  • [1] Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes
    Abbate, C.
    Busatto, G.
    Cova, P.
    Delmonte, N.
    Giuliani, F.
    Iannuzzo, F.
    Sanseverino, A.
    Velardi, F.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) : 202 - 209
  • [2] Metal oxide semiconductor-based Schottky diodes: a review of recent advances
    Al-Ahmadi, Noorah A.
    [J]. MATERIALS RESEARCH EXPRESS, 2020, 7 (03)
  • [3] The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate
    Arslan, Engin
    Ozturk, Mustafa K.
    Duygulu, Oezguer
    Kaya, Ali Arslan
    Ozcelik, Suleyman
    Ozbay, Ekmel
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (01): : 73 - 82
  • [4] Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD
    Arslan, Engin
    Ozturk, Mustafa K.
    Teke, Ali
    Ozcelik, Suleyman
    Ozbay, Ekmel
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (15)
  • [5] Fracture-dislocations of the forearm joint: a systematic review of the literature and a comprehensive locker-based classification system
    Artiaco, Stefano
    Fusini, Federico
    Sard, Arman
    Dutto, Elisa
    Masse, Alessandro
    Battiston, Bruno
    [J]. JOURNAL OF ORTHOPAEDICS AND TRAUMATOLOGY, 2020, 21 (01)
  • [6] TiO2 Interface Instead of SiO2 in Terms of Dielectric Coefficient
    Bilgili, Ahmet Kursat
    Ozturk, Mustafa Kemal
    Ozcelik, Suleyman
    Ozer, Metin
    [J]. BRAZILIAN JOURNAL OF PHYSICS, 2021, 51 (03) : 527 - 531
  • [7] A detailed study on optical properties of InGaN/GaN/Al2O3 multi quantum wells
    Bilgili, Ahmet Kursat
    Akpinar, Omer
    Ozturk, Mustafa Kemal
    Ozcelik, Suleyman
    Suludere, Zekiye
    Ozbay, Ekmel
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (11) : 10391 - 10398
  • [8] Bilgili Ahmet Kursat, 2021, KARADENIZ FEN BILIML, V11, P328, DOI [10.31466/kfbd.856824, DOI 10.31466/KFBD.856824]
  • [9] Bucurgat M., 2021, J I SCI TECHNOLOGY, V11, P1058
  • [10] On the Origin of the Ideality Factor in Perovskite Solar Cells
    Caprioglio, Pietro
    Wolff, Christian M.
    Sandberg, Oskar J.
    Armin, Ardalan
    Rech, Bernd
    Albrecht, Steve
    Neher, Dieter
    Stolterfoht, Martin
    [J]. ADVANCED ENERGY MATERIALS, 2020, 10 (27)
123