Multi-scale simulation of epitaxial processes

被引：0

作者：

Jaeckel, Linda ^{[1
,2
,3
]}

Zienert, Andreas ^{[1
,2
,3
]}

Lorenzt, Erik E. ^{[1
,2
,3
]}

Huber, Max ^{[1
,2
,3
]}

Schuster, Joerg ^{[1
,2
,3
]}

机构：

[1] Fraunhofer Inst Elect Nano Syst ENAS, Chemnitz, Germany

[2] Tech Univ Chemnitz, Ctr Mat Architectures & Integrat Nanomembranes MA, Chemnitz, Germany

[3] Tech Univ Chemnitz, Ctr Microtechnol, Chemnitz, Germany

来源：

2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM | 2023年

关键词：

epitaxial growth; modeling; numerical simulation; REACTOR;

D O I：

10.1109/IITC/MAM57687.2023.10154676

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

We present a multi-scale modeling strategy to investigate and optimize epitaxial growth. As example processes, we study Si and SiGe epitaxial films in various equipments. While reactor-scale and feature-scale simulation approaches are useful on themselves, only the combination of both approaches is capable of fully capturing the physical and chemical processes of epitaxial growth on structured substrates.

引用

页数：3

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