Non-Volatile Optical Switch Element Enabled by Low-Loss Phase Change Material

被引:43
作者
Yang, Xing [1 ]
Lu, Liangjun [1 ]
Li, Yu [1 ]
Wu, Yue [1 ]
Li, Ziquan [1 ]
Chen, Jianping [1 ]
Zhou, Linjie [1 ]
机构
[1] Shanghai Jiao Tong Univ, Shanghai Inst Adv Commun & Data Sci, State Key Lab Adv Opt Commun Syst & Networks, Dept Elect Engn,Shanghai Key Lab Nav & Locat Serv, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
nonvolatile optical switches; phase change materials; silicon photonics; SILICON; PHOTONICS; MEMORY;
D O I
10.1002/adfm.202304601
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Mach-Zehnder interferometers (MZIs) integrated with phase-change materials have attracted great interest due to their low power consumption and ultra-compact size, which are favored for reconfigurable photonic processors. However, they suffer from a low optical extinction ratio and limited switching cycles due to high material loss and poor reversible repeatability caused by material degradation. Here a non-volatile electrically reconfigurable 2 x 2 MZI integrated with a low-loss phase-change material Sb2Se3 encapsulated in Al2O3 layers is demonstrated. The phase change is electrically actuated by a forward-biased silicon p-i-n diode. The switch extinction ratio is more than 20 dB due to the low-loss Sb2Se3-based phase shifter. By dividing the Sb2Se3 patch into small sub-cells to restrict the material reflow, more than 10 000 reversible phase-change cycles and 6-bit multilevel switching states are achieved by programming the electrical pulses. Its non-volatility, high endurance, and fine-tuning capability makes the device promising in large-scale low-power reconfigurable photonic processors.
引用
收藏
页数:10
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