Chemical Solution Deposition of MTiO3(M = Ca, Sr, and Ba) Based Buffer Layer Prior to Coated Conductors Architectures

被引：1

作者：

Rijckaert, Hannes ^{[1
]}

De Buysser, Klaartje ^{[1
]}

Van Driessche, Isabel ^{[1
]}

机构：

[1] Univ Ghent, Dept Chem, SCRiPTS, B-9000 Ghent, Belgium

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2023年 / 33卷 / 05期

关键词：

Substrates; Yttrium barium copper oxide; Buffer layers; Metals; Methanol; Crystals; Chemicals; Buffer layer; chemical solution deposition; coated conductor; thin film; titanate; PRECURSOR CHEMISTRY; FILMS; GROWTH;

D O I：

10.1109/TASC.2023.3238991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical solution deposition (CSD) approach was introduced in this work to simplify and to optimize the trifluoracetic based MTiO3 (MTO, M = Ca, Sr, and Ba) precursor solution, leading to the high shelf-life and the purity. Growing these MTO solutions on (100) LaAlO3 single-crystal substrates yields (h00) oriented and dense MTO buffer layers. Whereas it is clear that the roughness of MTO films and the lattice mismatch between MTO buffer layer and superconducting YBa2Cu3O7-delta film is crucial for the film formation.

引用

页数：5

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