On the Evolution of Stress and Microstructure in Radio Frequency-Sputtered Lead-Free (Ba,Ca)(Zr,Ti)O3 Thin Films

被引:0
作者
Dahl-Hansen, Runar Pluennecke [1 ]
Stange, Marit Synnove Saeverud [1 ]
Sunde, Tor Olav [1 ]
Raeder, Johan Henrik [1 ]
Rorvik, Per Martin [1 ]
机构
[1] SINTEF, Forskningsveien 1, N-0373 Oslo, Norway
关键词
lead-free piezoelectrics; thin films; RF sputtering; residual stress; structural integrity; energy harvesting; microelectromechanical systems (MEMS); THERMAL-EXPANSION; PIEZOELECTRIC PROPERTIES; FERROELECTRIC PROPERTIES; FREE PIEZOCERAMICS; CRACK INITIATION; HEAT-CAPACITY; CERAMICS; STRENGTH; MECHANISM; DIRECTION;
D O I
10.3390/act13030115
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Thin-film piezoelectrics are widely investigated for actuators and energy harvesters, but there are few alternatives to toxic lead zirconate titanate. Biocompatible Ca- and Zr-modified BaTiO3 (BCZT) is one of the most promising lead-free alternatives due to its high piezoelectric response. However, the dielectric/piezoelectric properties and structural integrity of BCZT films, which are crucial for their applications, are strongly influenced by the substrate upon which the film is grown and the related processing methods. Here, the in-plane stress, microstructure, dielectric, and piezoelectric properties of 100-500 nm thick high-temperature RF-sputtered BCZT films on industrially relevant Si-based substrates were investigated. Obtaining polycrystalline piezoelectric films required deposition temperatures >= 700 degrees C, but this induced tensile stresses of over 1500 MPa, which caused cracking in all films thicker than 200 nm. This degraded the dielectric, piezoelectric, and ferroelectric properties of films with larger electrode areas for applications. Films on SrTiO3, on the other hand, had a compressive residual stress, with fewer defects and no cracks. The grain size and surface roughness increased with increasing deposition temperature. These findings highlight the challenges in processing BCZT films and their crucial role in advancing lead-free piezoelectric technologies for actual device applications.
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页数:13
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