Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al0.33Ga0.67As heterostructure

被引：1
作者：
Dobney, C. P. [1 ,3 ]
Nasir, A. [1 ]
See, P. [1 ]
Ford, C. J. B. [2 ]
Griffiths, J. P. [2 ]
Chen, C. [2 ]
Ritchie, D. A. [2 ]
Kataoka, M. [1 ]
机构：
[1] Natl Phys Lab, Hampton Rd, Teddington TW11 0LW, England
[2] Univ Cambridge, Cavendish Lab, J J Thomson Ave, Cambridge CB3 0HE, England
[3] Univ Toronto, McLennanPhys Labs, Dept Phys, 60 St George St, Toronto, ON M5S 1A7, Canada
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 06期
关键词：
semiconductors; lateral p-n junction; quantum technologies; single-electron sources; INDUCED 2-DIMENSIONAL ELECTRON;
D O I：
10.1088/1361-6641/acca40
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al0.33Ga0.67As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of similar to 8
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页数：5
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