High-temperature optoelectronic transport behavior of n-MoS2 nanosheets/ p-diamond heterojunction

In the past decades, even though the performance of electronic devices based on MoS2 has reached a very high level, the service life, failure rate and stability of the devices often deteriorate with the increase of temperature when they work in high temperature or harsh environment. In this work, n-MoS2 NSs/p-type boron-doped diamond (BDD) film heterojunction was fabricated by sol-gel method to investigate the temperature dependence of the optoelectronic transport behavior of the device, and the electrical properties of the heterojunction device at high temperature (RT-180 degrees C) were tested. The heterojunction presented all rectification characteristics from room temperature to 180 degrees C and exhibited good thermal stability. With the increase in temperature, the rectification ratio reached the maximum at 120 degrees C and turned into backward diodes at 160 degrees C and 180 degrees C. The mechanism of the current and rectification ratio of n-MoS2 NSs/p-BDD heterojunction changing with temperature was mainly attributed to the decrease of tunneling current caused by the shift of Fermi level of the two semiconductors at high temperature. The heterojunction undergoes a transition from tunneling current to thermal excitation current, and the shift of Fermi level to the valence band of n-MoS2 provides support for the transition to reverse diode. In accordance with the carrier transport behavior following ohmic laws, the current conduction of composite tunneling and the space charge limitation under different bias voltages and temperatures were also discussed, which provides theoretical and experimental basis for optimizing the design of new photoelectric devices in the field of high temperature optoelectronics.