Interface Hydrogen and Passivation of Amorphous Silicon / Crystalline Silicon Heterojunction

被引：0

作者：

Das, Ujjwal K. ^{[1
,2
,3
]}

Mouri, Tasnim K. ^{[1
,2
]}

Pina, Marissa ^{[4
]}

Parke, Tyler ^{[4
]}

Quinones, Dhamelyz R. S. ^{[4
]}

Teplyakov, Andrew V. ^{[4
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[3] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[4] Univ Delaware, Dept Chem & Biochem, Newark, DE 19716 USA

来源：

2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC | 2023年

关键词：

D O I：

10.1109/PVSC48320.2023.10359956

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The Si surface passivation by amorphous Si (a-Si:H) layers is investigated, where the a-Si:H layers are grown with different plasma current and methods. A significant improvement in passivation quality (iV(OC) = 738 mV, approximate to 40 mV increase from baseline) is achieved when the a-Si:H growth plasma was interrupted (OFF/ON) at the midway of deposition followed by a post deposition annealing. This improvement is attributed to the homogeneous uniform nucleation and growth of a-Si:H stack layer and layer densification (removal of some hydrogen) during annealing.

引用

页数：3

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