A 24-30-GHz Four-Element Phased Array Transceiver With Low Insertion Loss Compact T/R Switch and Bidirectional Phase Shifter for 5G Communication

被引:1
|
作者
Huang, Xiangrong [1 ]
Jia, Haikun [1 ,2 ]
Dong, Shengnan [1 ]
Deng, Wei [1 ]
Wang, Zhihua [1 ]
Chi, Baoyong [1 ]
机构
[1] Tsinghua Univ, BNIST, Sch Integrated Circuits, Beijing 100084, Peoples R China
[2] Tsinghua Univ Shenzhen, Guangdong Engineer Res Ctr ICs Wireless Healthcare, Res Inst, Shenzhen 518057, Peoples R China
基金
中国国家自然科学基金;
关键词
5G; CMOS; front end; insertion loss; phase shifter; phased array; T/R switch; transceiver; FRONT-END; TRANSMITTER; RECEIVER; DESIGN;
D O I
10.1109/TVLSI.2023.3308720
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This article presents a compact 24-30-GHz fourelement phased-array transceiver (TRx) front-end (FE) for 5-G communications. A compact T/R switch co-designed with power amplifier's (PA) output matching network and lownoise amplifier's (LNA) input matching network is proposed. Leveraging the transformers in the two matching networks, only one extra transistor switch is needed, which greatly reduces the chip area consumption and therefore the insertion loss. A bidirectional phase shifter composed of a two-stage polyphase filter (PPF) and two bidirectional variable-gain amplifiers (BVGA) is shared by both TX and RX. The 24-30-GHz fourelement TRx FE is implemented in 65-nm CMOS process. The TX path including the power splitter and T/R switch achieves a measured 11.5-/16.5-dBm OP1dB/PSAT with 12.2%/22.9% PAE1 dB/PAEMAX with 35.1-dB gain. The RX path including power combiner, T/R switch, and off-mode PA achieves a minimum 5.1-dB noise figure (NF) with 25.8-dB gain. The TX and RX paths achieve 5.625 degrees phase resolution with <2 degrees/0.4-dB rms phase/gain error as well as 30.6-dB gain control range with 0.5-dB gain step and <1.5 degrees /0.26-dB rms phase/gain error over 24-30 GHz. Under the 64-QAM fifth-generation (5G) NR FR2 orthogonal frequency division multiplexing (OFDM) measurements, the TX path achieves an average output power of 0 dBm per element (2.1% PAE) with 8.66% EVM, and the RX path achieves an average 4.96% EVM, making the proposed TRx FE suitable for 5G NR FR2 applications. The chip size excluding pads is 4.1 x 4.0 mm.
引用
收藏
页码:1839 / 1851
页数:13
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