A low power memristor based on Lu doped HfO2 ferroelectric thin films and its multifunctional realization

被引：3

作者：

Yan, Xiaobing ^{[1
]}

Bai, Jiahao ^{[1
]}

Zhang, Yinxing ^{[1
]}

Wang, Hong ^{[1
]}

Zhao, Jianhui ^{[1
]}

Zhou, Zhenyu ^{[1
]}

Sun, Yong ^{[1
]}

Wang, Zhongrong ^{[1
]}

Guo, Zhenqiang ^{[1
]}

Zhao, Zhen ^{[1
]}

Niu, Jiangzhen ^{[1
]}

机构：

[1] Hebei Univ, Coll Electron & Informat Engn, Key Lab Brain Like Neuromorph Devices & Syst Hebei, Sch Life Sci,Inst Life Sci & Green Dev, Baoding 071002, Peoples R China

来源：

MATERIALS TODAY NANO | 2024年 / 25卷

关键词：

Ferroelectric memristor; Synaptic plasticity; Decimal addition and multiplication; Neuromorphic network; ELECTRORESISTANCE;

D O I：

10.1016/j.mtnano.2024.100458

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Next-generation non-volatile memories with low power consumption and multiple functions are highly desired in the era of big data. Here, we report a high-performance ferroelectric memristor Pd/Lu:HfO2/La0.7Sr0.3MnO3/ SrTiO3/Si, which has low average set and reset powers of 4.28 nW and 0.75 nW, respectively. It can successfully simulate biological synaptic functions, such as the refractory period, spike-timing-dependent plasticity, and paired pulse facilitation. Moreover, the device realizes the simulation of decimal addition and multiplication. In particular, the device can be combined with the threshold device to form a neuromorphic network, which not only realizes multi-value data storage, data decryption and encryption, but also intensity modulation of peak frequency. These results may throw light on the way for the future research of low-power multifunctional neuro morphology chips.

引用

页数：8