Online Junction Temperature Estimation for SiC MOSFETs Using Drain Voltage Falling Edge Time

被引：4

作者：

Wang, Ying ^{[1
]}

Jiang, Xi ^{[1
,2
]}

Shi, Xinlong ^{[1
]}

Liu, Qifan ^{[1
]}

Zhang, Shijie ^{[1
,2
]}

Ouyang, Runze ^{[1
,2
]}

Jia, Daoyong ^{[1
,2
]}

Ma, Nianlong ^{[1
,2
]}

Gong, Xiaowu ^{[1
,2
]}

机构：

[1] Xidian Univ, Sch Microelect, Minist Educ Wide Bandgap Semicond Mat & Devices, Key Lab, Xian 710126, Peoples R China

[2] Xidian Univ, Guangzhou Inst Technol, Guangzhou 510555, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 10期

关键词：

Junction temperature; reliability; silicon carbide (SiC) MOSFETs; temperature sensitive electrical parameters (TSEPs); TURN-ON DELAY; POWER MOSFETS;

D O I：

10.1109/TED.2023.3306323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The junction temperature is vital for the reliability evaluation and health management in silicon carbide (SiC) MOSFET applications. This article proposes a novel method to estimate the junction temperature under actual operating conditions, using the drain voltage falling edge time (t(f,edge)) as temperature-sensitive electrical parameters (TSEPs). Experimental results show that the proposed circuit can estimate the junction temperature with good linearity, high-temperature sensitivity, and load current independence. Furthermore, the proposed method is verified with the aged SiC MOSFET after the power cycling test. It shows a tiny impact of the bond wire degradation on the junction temperature estimation accuracy.

引用

页码：5228 / 5235

页数：8

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