Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting

被引：2

作者：

Yeh, Yu-Hsuan ^{[1
]}

Chen, Wen-Chung ^{[2
]}

Chang, Ting-Chang ^{[3
]}

Tan, Yung-Fang ^{[2
]}

Wu, Chung-Wei ^{[1
]}

Zhang, Yong-Ci ^{[2
]}

Lee, Ya-Huan ^{[1
]}

Lin, Chao Cheng ^{[4
]}

Huang, Hui-Chun ^{[2
]}

Sze, Simon M. ^{[5
,6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Coll Semicond & Adv Technol Res, Ctr Crystal Res, Dept Phys, Kaohsiung 804, Taiwan

[4] Taiwan Semicond Res Inst, 26 Prosper Rd 1, Hsinchu, Taiwan

[5] Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[6] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 08期

关键词：

current fitting; degradation; electrode; HZO; FeRAM; THIN-FILMS; FIELD;

D O I：

10.1088/1361-6641/acde9f

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the difference in electrical performance and reliability arising from using either titanium nitride (TiN) or tantalum nitride (TaN) as the electrode in ferroelectric random access memories. Because the lattice constant of TaN is better matched to HZO, the TaN-electrode device exhibits better characteristic. However, the leakage of TaN-electrode device increases significantly after wake up. To figure out this phenomenon, current fitting is implemented. According to the fitting results of conduction mechanisms, the existence of oxygen vacancies in the TaN-electrode device provides a reliable explanation to propose models to clarify the degradation mechanisms observed from the TiN- and TaN-electode devices.

引用

页数：5